报告题目：Microsecond dark-exciton valley polarization memory in 2D heterostructures

报 告 人：南洋理工大学 高炜博教授

报告时间：2019年7月12日（周五）下午16:00

报告地点：子良B4会议室

邀 请 人：高分子材料与工程研究所 曹澥宏 教授

报告人简介：

高炜博老师分别于2005年和2010年本科、博士毕业于中国科技大学，博士导师潘建伟院士。2010年至2014年在玛丽居里奖学金资助下在苏黎世联邦理工学院（ETH, Zurich）做博士后研究。2014年起以助理教授身份任职于新加坡南洋理工，同年获得新加坡国家研究基金会奖。2017获新加坡总统年青科学家奖。高炜博老师的研究领域是基于固态量子体系的量子光学与量子信息，相关成果发表在Nature, Nature Physics, Nature Photonics, Science Advance 等期刊。

报告内容摘要：

Valley hall effect is one of most important phenomenon in 2D material towards valleytronic devices. The demonstration of valley hall effect for electrons (Science 344, 1489-1492 (2014)) and excitons (Nat Mater 16, 1193 (2017)) have triggered great interest in the community. However, they are required to operate only at cryo-temperature. Interlayer excitons bring the possibility to act as better devices due to their much longer valley lifetime and therefore longer transport distance as compared to monolayers [1].  In this talk, we will talk about valley hall effect for electron/hole as well as interlayer excitons in heterostructures in MoS2/WSe2. The working condition in room temperature together with possibility to electrically control their movement may render interesting valleytronic devices in near future. 

Reference：

[1] Chongyun Jiang, Weigao Xu, Abdullah Rasmita, Zumeng Huang, Ke Li, Qihua Xiong, Wei-bo Gao Microsecond dark-exciton valley polarization memory in 2D heterostructures Nature Communications 9，753 (2018).